pnp silicon planar medium power transistors issue 2 ? july 94 features * 150 volt v ceo * 1 amp continuous current * low saturation voltage *p tot = 1 watt absolute maximum ratings. parameter symbol ZTX754 ztx755 unit collector-base voltage v cbo -125 -150 v collector-emitter voltage v ceo -125 -150 v emitter-base voltage v ebo -5 v peak pulse current i cm -2 a continuous collector current i c -1 a power dissipation at t amb =25c p tot 1w operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol ZTX754 ztx755 unit conditions. min. max. min. max. collector-base breakdown voltage v (br)cbo -125 -150 v i c =-100 m a, i e =0 collector-emitter breakdown voltage v (br)ceo -125 -150 v i c =-10ma, i b =0* emitter-base breakdown voltage v (br)ebo -5 -5 v i e =-100 m a, i c =0 collector cut-off current i cbo -100 -100 na na v cb =-100v, i e =0 v cb =-125v, i e =0 emitter cut-off current i ebo -100 -100 na v eb =-3v, i c =0 collector-emitter saturation voltage v ce(sat) -0.5 -0.5 -0.5 -0.5 v v i c =-500ma, i b =-50ma* i c =-1a, i b =-200ma* base-emitter saturation voltage v be(sat) -1.1 -1.1 v i c =-500ma, i b =-50ma* base-emitter turn-on voltage v be(on) -1.0 -1.0 v ic=-500ma, v ce =-5v* static forward current transfer ratio h fe 50 50 20 50 50 20 i c =-10ma, v ce =-5v i c =-500ma, v ce =-5v* i c =-1a, v ce =-5v* transition frequency f t 30 30 mhz i c =-10ma, v ce =-20v f=20mhz output capacitance c obo 20 20 pf v cb =-20v, f=1mhz e-line to92 compatible ZTX754 ztx755 3-263 c b e typical characteristics v ce(sat) v i c i c - collector current (amps) v ce ( sa t ) - (v olts) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h f e - norma l ised ga i n ( % ) v be ( sa t ) - (v olts) v be - (v olts) i c - co l le c to r cur r e nt ( am ps) v ce - collector voltage (volts) safe operating area 11 0 0 0 10 100 0.01 0.1 1 10 single pulse test at t amb =25c d.c. 1s 100ms 10ms 1.0ms 300s 0.001 0.01 10 0.1 1 20 40 60 80 100 0.2 0.001 0.1 1 0.4 0.6 1.0 0 0.001 0.01 1 0.1 0.2 0.4 0.6 0.8 v ce =5v i c /i b =10 i c /i b =10 switching speeds i c - collector current (amps) switching time 0.1 1 i b1 =i b2 =i c /10 0.01 ts tf td tr td tr tf s 2.0 1.0 ts s 0.3 0.2 0.1 0.4 0.5 0 0.01 0.0001 0.001 1 0.01 0.1 0.6 0.8 1.0 1.2 v ce =5v 0.4 0.8 ZTX754 zt x 7 5 5 v ce =10v ZTX754 ztx755 3-264 ZTX754 not recommended for new design please use ztx755
pnp silicon planar medium power transistors issue 2 ? july 94 features * 150 volt v ceo * 1 amp continuous current * low saturation voltage *p tot = 1 watt absolute maximum ratings. parameter symbol ZTX754 ztx755 unit collector-base voltage v cbo -125 -150 v collector-emitter voltage v ceo -125 -150 v emitter-base voltage v ebo -5 v peak pulse current i cm -2 a continuous collector current i c -1 a power dissipation at t amb =25c p tot 1w operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol ZTX754 ztx755 unit conditions. min. max. min. max. collector-base breakdown voltage v (br)cbo -125 -150 v i c =-100 m a, i e =0 collector-emitter breakdown voltage v (br)ceo -125 -150 v i c =-10ma, i b =0* emitter-base breakdown voltage v (br)ebo -5 -5 v i e =-100 m a, i c =0 collector cut-off current i cbo -100 -100 na na v cb =-100v, i e =0 v cb =-125v, i e =0 emitter cut-off current i ebo -100 -100 na v eb =-3v, i c =0 collector-emitter saturation voltage v ce(sat) -0.5 -0.5 -0.5 -0.5 v v i c =-500ma, i b =-50ma* i c =-1a, i b =-200ma* base-emitter saturation voltage v be(sat) -1.1 -1.1 v i c =-500ma, i b =-50ma* base-emitter turn-on voltage v be(on) -1.0 -1.0 v ic=-500ma, v ce =-5v* static forward current transfer ratio h fe 50 50 20 50 50 20 i c =-10ma, v ce =-5v i c =-500ma, v ce =-5v* i c =-1a, v ce =-5v* transition frequency f t 30 30 mhz i c =-10ma, v ce =-20v f=20mhz output capacitance c obo 20 20 pf v cb =-20v, f=1mhz e-line to92 compatible ZTX754 ztx755 3-263 c b e typical characteristics v ce(sat) v i c i c - collector current (amps) v ce ( sa t ) - (v olts) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h f e - norma l ised ga i n ( % ) v be ( sa t ) - (v olts) v be - (v olts) i c - co l le c to r cur r e nt ( am ps) v ce - collector voltage (volts) safe operating area 11 0 0 0 10 100 0.01 0.1 1 10 single pulse test at t amb =25c d.c. 1s 100ms 10ms 1.0ms 300s 0.001 0.01 10 0.1 1 20 40 60 80 100 0.2 0.001 0.1 1 0.4 0.6 1.0 0 0.001 0.01 1 0.1 0.2 0.4 0.6 0.8 v ce =5v i c /i b =10 i c /i b =10 switching speeds i c - collector current (amps) switching time 0.1 1 i b1 =i b2 =i c /10 0.01 ts tf td tr td tr tf s 2.0 1.0 ts s 0.3 0.2 0.1 0.4 0.5 0 0.01 0.0001 0.001 1 0.01 0.1 0.6 0.8 1.0 1.2 v ce =5v 0.4 0.8 ZTX754 zt x 7 5 5 v ce =10v ZTX754 ztx755 3-264 ZTX754 not recommended for new design please use ztx755
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